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| (R) STPS30150CT/CW/CFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS s 2 x 15 A 150 V 175C 0.75 V A2 A2 K A1 K TO-220FPAB STPS30150CFP s s s s HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT INSULATED PACKAGE: TO-220FPAB Insulating voltage: 2000V DC Capacitance: 45pF AVALANCHE CAPABILITY SPECIFIED A2 K A1 A2 K A1 DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Parameter Repetitive peak reverse voltage TO-247 STPS30150CW TO-220AB STPS30150CT Value 150 30 per diode per device 15 30 tp = 10 ms sinusoidal tp = 1s Tj = 25C 220 10500 - 65 to + 175 175 10000 Unit V A A TO-220FPAB Tc = 110C TO-220AB TO-247 Tc = 155C IFSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/6 July 2003 - Ed: 6C STPS30150CT/CW/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220FPAB TO-220AB TO-247 Rth (c) TO-220FPAB TO-220AB TO-247 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Value Per diode Total Per diode Total Per diode Total Coupling Coupling Coupling 4 3.3 1.6 0.85 1.5 0.8 2.6 0.1 0.1 Unit C/W Min. Typ. Max. 6.5 8 0.92 Unit A mA V VR = VRRM IF = 15 A IF = 15 A IF = 30 A IF = 30 A 0.8 0.69 0.75 1 0.86 To evaluate the conduction losses use the following equation: P = 0.64 x IF(AV) + 0.0073 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 14 12 10 8 6 4 2 0 IF(av) (A) =tp/T T Fig. 2: Average forward current versus ambient temperature ( = 0.5, per diode). IF(av)(A) = 0.1 = 0.05 = 0.2 = 0.5 =1 tp 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) TO-220AB/TO-247/IPAK/DPAK TO-220FPAB Rth(j-a)=15C/W T =tp/T tp Tamb(C) 50 75 100 125 150 0 25 2/6 STPS30150CT/CW/CFP Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 250 200 150 Tc=50C Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220FPAB only). IM(A) 140 120 100 80 60 Tc=25C Tc=75C 100 50 IM t Tc=75C 40 Tc=125C =0.5 IM Tc=125C t t(s) 1E-2 1E-1 1E+0 20 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 Fig. 6-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) Fig. 6-2: Relative variation of thermal impedance junction to case versus pulse duration. (TO-220FPAB) Zth(j-c)/Rth(j-c) 1.0 0.8 Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 = 0.5 0.6 0.4 = 0.5 = 0.2 = 0.1 = 0.2 T 0.2 tp = 0.1 T Single pulse tp(s) 1E-2 1E-1 0.0 1E-3 =tp/T Single pulse tp(s) 1E-2 1E-1 1E+0 0.0 1E-3 =tp/T tp 1E+0 1E+1 3/6 STPS30150CT/CW/CFP Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). IR(A) 1E+5 Tj=175C C(pF) 1000 F=1MHz Tj=25C 1E+4 1E+3 1E+2 Tj=150C Tj=125C 100 Tj=100C 1E+1 1E+0 1E-1 0 25 50 Tj=25C VR(V) 75 100 125 150 VR(V) 10 1 2 5 10 20 50 100 200 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 100.0 Tj=125C Typical values 10.0 Tj=125C Tj=25C 1.0 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 4/6 STPS30150CT/CW/CFP PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 PACKAGE MECHANICAL DATA TO-220FPAB DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.4 4.6 0.173 0.181 2.5 2.7 0.098 0.106 2.5 2.75 0.098 0.108 0.45 0.70 0.018 0.027 0.75 1 0.030 0.039 1.15 1.70 0.045 0.067 1.15 1.70 0.045 0.067 4.95 5.20 0.195 0.205 2.4 2.7 0.094 0.106 10 10.4 0.393 0.409 16 Typ. 0.63 Typ. 28.6 30.6 1.126 1.205 9.8 10.6 0.386 0.417 2.9 3.6 0.114 0.142 15.9 16.4 0.626 0.646 9.00 9.30 0.354 0.366 3.00 3.20 0.118 0.126 5/6 A H B REF. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E STPS30150CT/CW/CFP PACKAGE MECHANICAL DATA TO-247 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.85 5.15 0.191 0.203 D 2.20 2.60 0.086 0.102 E 0.40 0.80 0.015 0.031 F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078 F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133 G 10.90 0.429 H 15.45 15.75 0.608 0.620 L 19.85 20.15 0.781 0.793 L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216 M 2.00 3.00 0.078 0.118 V 5 5 V2 60 60 Dia. 3.55 3.65 0.139 0.143 V REF. Dia. V H A L5 L L2 L4 F2 F3 V2 F(x3) G = = M E F4 L3 F1 L1 D s s s Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering Type STPS30150CT STPS30150CFP STPS30150CW s Marking STPS30150CT STPS30150CFP STPS30150CW Package TO-220AB TO-220FPAB TO-247 Weight 2g 1.9 g 4.4 g Base qty 50 50 30 Delivery mode Tube Tube Tube Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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